A study of static RAM cell using the lambda bipolar transistor (LBT)

✍ Scribed by Manju Sarkar; M. Satyam; A. Prabhakar

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 531 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00059-6

✦ Synopsis

The bistable element of an SRAM cell, comprised the LBT in the common-collector configuration along with a couple of polysilicon resistors (as proposed in the literature), has been studied. Under the present study a similar case has been visualized and studied with the LBT in commonemitter configuration, and the stable points therein have been derived. From the point of view of practical applications, the merits and demerits of either case have been highlighted and discussed. An improved method of reading the cell information ha:; been proposed.