𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modelling DC characteristics of heterostructure bipolar junction transistors

✍ Scribed by Muhammad Taher Abuelma'atti

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
175 KB
Volume
17
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.

✦ Synopsis

A simple empirical equation is presented to relate the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VcE characteristics, The parameters of this model can easily be extracted from separate regions in the device characteristics.

πŸ“œ SIMILAR VOLUMES

Modelling DC characteristics of lambda t
Modelling DC characteristics of lambda transistors for CAD
✍ Muhammad Taher Abuelma'atti πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science 🌐 English βš– 112 KB

A simple empirical equation is proposed to represent the current/voltage characteristics of lambda transistors. The parameters of this model can be easily extracted from separate regions in the device characteristics.

SPICE-aided modelling of dc characterist
SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account
✍ Janusz ZarΔ™bski; Krzysztof GΓ³recki πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 311 KB

## Abstract This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self‐heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimen