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SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account

✍ Scribed by Janusz Zarębski; Krzysztof Górecki


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
311 KB
Volume
22
Category
Article
ISSN
0894-3370

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✦ Synopsis


Abstract

This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self‐heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors—BD285 and 2N3055—were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed. Copyright © 2009 John Wiley & Sons, Ltd.