๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Modelling DC characteristics of MOSFET

โœ Scribed by Muhammad Taher Abuelma'atti


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
207 KB
Volume
19
Category
Article
ISSN
0010-4485

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Modelling DC characteristics of heterost
โœ Muhammad Taher Abuelma'atti ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 175 KB

A simple empirical equation is presented to relate the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VcE characteristics, The parameters of this model can easily be extracted from separ

Modelling DC characteristics of lambda t
โœ Muhammad Taher Abuelma'atti ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 112 KB

A simple empirical equation is proposed to represent the current/voltage characteristics of lambda transistors. The parameters of this model can be easily extracted from separate regions in the device characteristics.

Neuro-space mapping-based DC modeling fo
โœ Shoulin Li; Bo Han; Jiali Cheng; Jianjun Gao ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 439 KB

In this article, two approaches for modeling DC characteristics for MOSFET based on neuro-space mapping (SM) are proposed. The first approach makes use of classical neuro-SM technology, while the second combines neuro-SM with prior knowledge input and source difference method. The formulas for obtai

Modelling of a depletion-mode MOSFET
โœ C.D. Parikh; J. Vasi ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 397 KB