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Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon

✍ Scribed by A. Simionescu; S. Herzog; G. Hobler; R. Schork; J. Lorenz; C. Tian; G. Stingeder

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Flux Dependence of Damage Accumulation i

✍ Holldack, K. ;Kerkow, H. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 410 KB

The Behaviour of Arsenic in Crystals of

✍ Komakov, F. F. ;Novikov, A. P. ;Kotov, E. V. ;Podlipko, E. A. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 268 KB

Status and open problems in modeling of

✍ G. Hobler; G. Otto 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 375 KB

Simulations of arsenic and boron co-impl

✍ A. Merabet 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 247 KB

Continuum modeling of post-implantation

✍ H.Y. Chan; M.P. Srinivasan; F. Benistant; K.R. Mok; Lap Chan; H.M. Jin 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 238 KB

Variations in the electronic structure o

✍ M. T. Normuradov; A. K. Tashatov; A. S. Rysbaev; Zh. B. Khuzhaniyazov; Yu. Yu. Y 📂 Article 📅 2007 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 185 KB