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The Behaviour of Arsenic in Crystals of Silicon during Self-Annealing Ion Implantation

✍ Scribed by Komakov, F. F. ;Novikov, A. P. ;Kotov, E. V. ;Podlipko, E. A.

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
268 KB
Volume
112
Category
Article
ISSN
0031-8965

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Atomistic simulation of defects evolutio
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✍ Min Yu; Ru Huang; Xing Zhang; Yangyuan Wang; Kunihiro Suzuki; Hideki Oka πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 278 KB

Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)