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Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

✍ Scribed by M. T. Normuradov; A. K. Tashatov; A. S. Rysbaev; Zh. B. Khuzhaniyazov; Yu. Yu. Yuldashev; Yu. D. Kholikov; S. S. Nasriddinov

No coin nor oath required. For personal study only.

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