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Model for optically biased short-channel GaAs MESFET

✍ Scribed by Srikanta Bose; Adarsh; Ritesh Gupta; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
233 KB
Volume
32
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

An analytical model for an optically biased nonself‐aligned short‐channel GaAs MESFET is developed by solving the two‐dimensional Poisson's equation using a Green's function technique to obtain an optical radiation‐dependent threshold‐voltage expression incorporating the drain‐induced barrier lowering (DIBL), an important short‐channel effect. The developed model, being analytical, can be suitably used for simulation purposes in monolithic microwave integrated circuits using an optically biased MESFET for high‐frequency optical communication systems. © 2002 John Wiley & Sons, Inc. Microwave Opt Technol Lett 32: 138–142, 2002.

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