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Low temperature behaviour of short channel GaAs MESFETs

✍ Scribed by Bart J. Van Zeghbroeck

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
348 KB
Volume
30
Category
Article
ISSN
0011-2275

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✦ Synopsis

Low temperature operation of GaAs MESFETs is of interest for special applications which impose a low ambient temperature on the semiconductor devices and as a way to improve performance because of higher electron mobility, lower leakage currents and reduced thermal noise. This paper focuses on the low temperature d.c. characteristics of short channel GaAs MESFETs with very shallow and highly doped channels. The physics of the device is discussed and the theoretical analysis illustrated with experimental results obtained on devices with gate lengths < V2 #m over the temperature range 4.2-300 K

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Model for optically biased short-channel
Model for optically biased short-channel GaAs MESFET
✍ Srikanta Bose; Adarsh; Ritesh Gupta; Mridula Gupta; R. S. Gupta 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 233 KB

## Abstract An analytical model for an optically biased nonself‐aligned short‐channel GaAs MESFET is developed by solving the two‐dimensional Poisson's equation using a Green's function technique to obtain an optical radiation‐dependent threshold‐voltage expression incorporating the drain‐induced b