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Low-temperature photoluminescence of short-period GaAs/AlAs superlattices

โœ Scribed by V.G. Litovchenko; A.I. Bercha; D.V. Korbutyak; V.I. Gavrilenko; K. Ploog

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
503 KB
Volume
217
Category
Article
ISSN
0040-6090

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Identification of zone boundary and inte
Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices
โœ T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 89 KB

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba