Low temperature operation of GaAs MESFETs is of interest for special applications which impose a low ambient temperature on the semiconductor devices and as a way to improve performance because of higher electron mobility, lower leakage currents and reduced thermal noise. This paper focuses on the l
✦ LIBER ✦
Diffusion effects in short-channel GaAs MESFETs
✍ Scribed by P.A. Sandborn; J.R. East; G.I. Haddad
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 488 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0038-1101
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