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Channel current limitations in GaAs MESFETS

โœ Scribed by Hatsuaki Fukui


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
675 KB
Volume
22
Category
Article
ISSN
0038-1101

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Low temperature operation of GaAs MESFETs is of interest for special applications which impose a low ambient temperature on the semiconductor devices and as a way to improve performance because of higher electron mobility, lower leakage currents and reduced thermal noise. This paper focuses on the l