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Current-voltage characteristics of submicrom GaAs MESFETs with nonuniform channel doping profiles

✍ Scribed by Ko-Ming Shih; D.P. Klemer; J.J. Liou


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
469 KB
Volume
35
Category
Article
ISSN
0038-1101

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A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have