GaAs MESFETs with channel-doping variations
✍ Scribed by Z. Abid; A. Gopinath; B. Meskoob; S. Prasad
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 395 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0038-1101
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Low temperature operation of GaAs MESFETs is of interest for special applications which impose a low ambient temperature on the semiconductor devices and as a way to improve performance because of higher electron mobility, lower leakage currents and reduced thermal noise. This paper focuses on the l
## Abstract An analytical model for an optically biased nonself‐aligned short‐channel GaAs MESFET is developed by solving the two‐dimensional Poisson's equation using a Green's function technique to obtain an optical radiation‐dependent threshold‐voltage expression incorporating the drain‐induced b