Determination of the active-layer temperature near the channel of GaAs MESFET's
β Scribed by L. Bourbonnais; O. Berolo; E. Fortin
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 512 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
transmission peak within the bandgap when the defect permittivity increases. The second transmission peak appears due to the shift of the first periodic structure upper frequency f c2 to lower frequencies, and the appearance of the second periodic structure bandgap at 10.5 GHz (5 Ο« 2.09 GHz), when t
## Abstract A novel extractionion method has been proposed for direct extract of the higher order Taylor coefficients of the channel current __I~ds~__ (__V~gs~__,β__V~ds~__) in a GaAs MESFET. Lowβfrequency (45 and 70 MHz) twoβtone signals are employed to measure the harmonic component, and the load