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Analytical modelling of photo-effects on the S-parameters of GaAs MESFETs

✍ Scribed by Neti. V. L. Narasimha Murty; S. Jit

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
147 KB
Volume
48
Category
Article
ISSN
0895-2477

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✦ Synopsis

transmission peak within the bandgap when the defect permittivity increases. The second transmission peak appears due to the shift of the first periodic structure upper frequency f c2 to lower frequencies, and the appearance of the second periodic structure bandgap at 10.5 GHz (5 Ο« 2.09 GHz), when the permittivity of the defect approaches that of the host dielectric. The more the permittivity of the defect is closer to that of the host material, the more the stopbands of the second structure are deeper and interfere with those of the first structure stopband, giving rise to the second transmission peak and affecting the band-gap cutoff frequencies.

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