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Statistical analysis of GaAs MESFET S-parameter equivalent-circuit models

✍ Scribed by Anholt, R. ;Worley, R. ;Neidhard, R.

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
593 KB
Volume
1
Category
Article
ISSN
1050-1827

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✦ Synopsis

We compare the ability of three different equivalent-circuit extraction methods to give ensembles of model parameters that accurately predict not only average S-parameters but the S-parameter statistics, i.e., the standard deviations and intercorrelations between the real and imaginary parts. Measurements were made for 400 GaAs MESFETs fabricated on a single wafer with an MBE-grown active layer. Data is compared for different biases. We find that bimodal distributions give correlations that the equivalent-circuit models fail to model. The possibility of using uncorrelated equivalent-circuit values is also discussed.

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