✦ LIBER ✦
GaAs MESFET rf I-V curve through unique determination of small-signal circuit parameters from measured S parameters
✍ Scribed by C. C. Meng; G. H. Huang
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 187 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I‐V curve for uniform‐doped MESFETs. No dc measurement is needed in this method. The resulting rf I‐V curve differs from the static dc I‐V curve and is useful to predict rf performance. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 426–427, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10483