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RF equivalent-circuit model of interconnect bends based on S-parameter measurements

✍ Scribed by Xiaomeng Shi; Jianguo Ma; Beng Hwee Ong; Kiat Seng Yeo; Manh Anh Do; Erping Li

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
289 KB
Volume
45
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A modified model for RF interconnect bends on lossy substrate in CMOS technology is presented. The model parameters are extracted directly from the on‐wafer S‐parameter measurements. The accuracy is verified up to 20 GHz by the measurements of the test structures. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 170–173, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20760

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