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Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

✍ Scribed by Wenjuan Zhu; Jin-Ping Han; Ma, T.P.

Book ID: 114617302
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 399 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.821384

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