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A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

โœ Scribed by E. Amat; T. Kauerauf; R. Rodriguez; M. Nafria; X. Aymerich; R. Degraeve; G. Groeseneken

Book ID
118183631
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
654 KB
Volume
103
Category
Article
ISSN
0167-9317

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โœ E. Amat; T. Kauerauf; R. Degraeve; R. Rodrรญguez; M. Nafrรญa; X. Aymerich; G. Groe ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 319 KB

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the

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## Abstract The degradation produced by channel hotโ€carrier (CHC) on short channel transistors with highโ€k dielectric has been analyzed. For short channel transistors (__L__<0.15โ€‰ยตm), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the โ€˜classicalโ€™ __V__~G~=__V__