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Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

โœ Scribed by Amat, E.; Kauerauf, T.; Degraeve, R.; De Keersgieter, A.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Groeseneken, G.

Book ID
120825554
Publisher
IEEE
Year
2009
Tongue
English
Weight
287 KB
Volume
9
Category
Article
ISSN
1530-4388

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๐Ÿ“œ SIMILAR VOLUMES

Channel hot-carrier degradation in pMOS
Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
โœ E. Amat; T. Kauerauf; R. Degraeve; R. Rodrรญguez; M. Nafrรญa; X. Aymerich; G. Groe ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 319 KB

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the

Simulation of the hot-carrier degradatio
Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric
โœ E. Amat; T. Kauerauf; R. Degraeve; R. Rodrรญguez; M. Nafrรญa; X. Aymerich; G. Groe ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 302 KB

## Abstract The degradation produced by channel hotโ€carrier (CHC) on short channel transistors with highโ€k dielectric has been analyzed. For short channel transistors (__L__<0.15โ€‰ยตm), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the โ€˜classicalโ€™ __V__~G~=__V__