Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

✍ Scribed by Dongwoo Kim; Seonhaeng Lee; Cheolgyu Kim; Chiho Lee; Jeongsoo Park; Bongkoo Kang

• Book ID: 119326669
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 212 KB
• Volume: 52
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2012.06.011