A new hot-carrier induced degradation mode under low gate and drain bias stresses in n-channel MOSFETs

✍ Scribed by Masakazu Shimaya; Shigeo Ogawa; Noboru Shiono

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 349 KB
• Volume: 22
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(93)90176-6