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Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

✍ Scribed by E. Amat; R. Rodríguez; M. Nafría; X. Aymerich

Book ID
104052308
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
350 KB
Volume
86
Category
Article
ISSN
0167-9317

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A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the

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## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 µm), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the ‘classical’ __V__~G~=__V__