Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors
β Scribed by Hastas, N.A.; Dimitriadis, C.A.; Brini, J.; Kamarinos, G.
- Book ID
- 114616829
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 275 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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## Abstract The degradation produced by channel hotβcarrier (CHC) on short channel transistors with highβk dielectric has been analyzed. For short channel transistors (__L__<0.15βΒ΅m), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the βclassicalβ __V__~G~=__V__
A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the