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A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

✍ Scribed by Kawamura, T.; Matsumura, M.; Kaitoh, T.; Noda, T.; Hatano, M.; Miyazawa, T.; Ohkura, M.


Book ID
114619267
Publisher
IEEE
Year
2009
Tongue
English
Weight
397 KB
Volume
56
Category
Article
ISSN
0018-9383

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