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High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments
✍ Scribed by Krishnamohan, T.; Krivokapic, Z.; Uchida, K.; Nishi, Y.; Saraswat, K.C.
- Book ID
- 114618237
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 918 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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