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Microstructure of β-FeSi2 buried layers synthesis by ion implantation

✍ Scribed by R. Ayache; E. Richter; A. Bouabellou


Book ID
113822716
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
505 KB
Volume
216
Category
Article
ISSN
0168-583X

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We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 °C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe