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Ion beam synthesis of buried epitaxial FeSi2

✍ Scribed by K. Radermacher; S. Mantl; R. Apetz; Ch. Dieker; H. Lüth

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
333 KB
Volume
12
Category
Article
ISSN
0921-5107

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✦ Synopsis

We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 °C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe0.s3Si2, corresponding to approximately 17% iron vacancies. Schottky diodes were fabricated on n-type silicon with ideality factors of n = 1.4 + 0.1 and Schottky barrier heights of q~ = 0.84 + 0.03 eV. Deep level transient spectroscopy measurements of these diodes showed a low concentration of iron in silicon of about 1 × 1013 cm -3. Semiconducting stoichiometric fl-FeSi 2 layers were produced by transforming buried a-FeSi 2 layers into fl-FeSi 2 by furnace annealing at 800 °C for 17 h.

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