We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 Β°C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe
β¦ LIBER β¦
Ion beam synthesis of buried FeSi2 in (100) silicon
β Scribed by D. Panknin; E. Wieser; R. Groetzschel; W. Skorupa; D. Baither; H. Bartsch; G. Querner; A. Danzig
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 331 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0921-5107
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