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Microstructure and electromigration in copper damascene lines

✍ Scribed by Lucile Arnaud; G. Tartavel; T. Berger; D. Mariolle; Y. Gobil; I. Touet

Book ID
108362472
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
762 KB
Volume
40
Category
Article
ISSN
0026-2714

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✍ K. Leaming-Sphabmixay; J. Van Olmen; K.J. Moon; Kris Vanstreels; J. D’Haen; Z. T πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 655 KB

The fabrication of narrow Cu trenches using a conformal TEOS backfill approach is shown. Cu trenches with widths down to 30-40 nm were achieved. With an adequate Ta-based PVD barrier and Cu seed layer scheme, narrow Cu lines with high yield were obtained. An increase of the electrical resistivity in