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Microstructural evolution of oxygen implanted silicon during annealing processes

โœ Scribed by M.; T. Tsunemori; S. Harada; M. Arita; T. Motooka

Book ID
114170720
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
660 KB
Volume
148
Category
Article
ISSN
0168-583X

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Microstructure evolution of hydrogen-imp
Microstructure evolution of hydrogen-implanted silicon during the annealing process
โœ Jing Wang; Qinghua Xiao; Hailing Tu; Beiling Shao; Ansheng Liu ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 795 KB

The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps