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Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing

✍ Scribed by Nakamura, Minoru; Murakami, Susumu


Book ID
120080211
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
344 KB
Volume
94
Category
Article
ISSN
0021-8979

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πŸ“œ SIMILAR VOLUMES


Atomistic simulation of defects evolutio
✍ Min Yu; Ru Huang; Xing Zhang; Yangyuan Wang; Kunihiro Suzuki; Hideki Oka πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 278 KB

Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)