Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K

✍ Scribed by G. Weyer; H.P. Gunnlaugsson; M. Dietrich; M. Fanciulli; K. Bharuth-Ram; R. Sielemann

• Book ID: 114167022
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 107 KB
• Volume: 206
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(03)00688-8