Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

✍ Scribed by Giri, P. K.; Coffa, S.; Raineri, V.; Privitera, V.; Galvagno, G.; La Ferla, A.; Rimini, E.

• Book ID: 120066719
• Publisher: American Institute of Physics
• Year: 2001
• Tongue: English
• Weight: 584 KB
• Volume: 89
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1357464