𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

✍ Scribed by J. Bak-Misiuk; A. Misiuk; W. Paszkowicz; A. Shalimov; J. Härtwig; L. Bryja; J.Z. Domagala; J. Trela; W. Wierzchowski; K. Wieteska; J. Ratajczak; W. Graeff

Book ID
117622150
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
194 KB
Volume
362
Category
Article
ISSN
0925-8388

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect structure of silicon crystals imp
Defect structure of silicon crystals implanted with H2+ions
✍ Shalimov, Artem ;Shcherbachev, Kirill D. ;Bak-Misiuk, Jadwiga ;Misiuk, Andrzej 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 517 KB

## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10^16^ cm^–2^. After implantation, Si:H samples were annealed at 450 and 650 °C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as‐implanted and processed Si:H was