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Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ions

✍ Scribed by O. A. Golikova; A. N. Kuznetsov; V. Kh. Kudoyarova; I. N. Petrov; É. P. Domashevskaya; V. A. Terekhov

No coin nor oath required. For personal study only.

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