Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye
On the properties of amorphous silicon films and amorphous Si-crystalline si heterojunction
โ Scribed by Azimov, S. A. ;Isamukhamedova, D. ;Karageorgy-Alkalaev, P. M. ;Yu. Leiderman, A. ;Yabov, Yu. M.
- Publisher
- John Wiley and Sons
- Year
- 1985
- Tongue
- English
- Weight
- 256 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0031-8965
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