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Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

✍ Scribed by Yanhong Huang; Kun Zhao; Huibin Lu; Kui-juan Jin; Meng He; Zhenghao Chen; Yueliang Zhou; Guozhen Yang

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
186 KB
Volume
373
Category
Article
ISSN
0921-4526

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✦ Synopsis

High-quality heterojunctions consisting of n-type amorphous LaAlO 3Γ€d and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO 3Γ€d /Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications.

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