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Electrical characteristics of InSb-GaAs heterojunctions

✍ Scribed by J.-I. Chyi; D. Mui; J. Chen; H. Morkoç

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
334 KB
Volume
34
Category
Article
ISSN
0038-1101

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Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye