Electrical characteristics of amorphous GaAs-n-crystalline Si heterojunctions

✍ Scribed by A. Fennouh; K. Aguir; H. Carchano; J.L. Seguin

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 397 KB
• Volume: 34
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)01221-4

✦ Synopsis

Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion layer of a-GaAs-c-Si(n) junction spreads in the c-Si side. The forward current, for bias voltages less than 0.4 V, shows voltage and temperature dependence expressed as exp (-Eaf/k T)exp (A V), where Eaf and A are constants independent of voltage and temperature. This current may be ascribed to a multi-tunnelling capture-emission phenomena. The reverse current is proportional to exp(-Ea~/kT)(V) 1/2, where Ear is a constant. This current is probably limited by a generation process.