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Fabrication and electrical characterization of p-NiPc/n-Si heterojunction

✍ Scribed by M.M. El-Nahass; K.F. Abd-El-Rahman; A.A.A. Darwish


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
187 KB
Volume
38
Category
Article
ISSN
0026-2692

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Electrical characterization of p-ZnO/p-S
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Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It