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Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy

โœ Scribed by A.A.M. Farag; A. Ashery; F.S. Terra


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
549 KB
Volume
39
Category
Article
ISSN
0026-2692

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Electrical and photoelectrical character
โœ A.A.M. Farag; F.S. Terra; G.M. Mahmoud ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 830 KB

The present work deals with the electrical and optoelectronic characterizations of the isotype GaAs 15 P 85 /GaP devices prepared by liquid phase epitaxy. The electrical properties of the fabricated junction were studied by analyzing its current-voltage (I-V) characteristics, capacitance-voltage (C-