Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye
โฆ LIBER โฆ
Electrical properties of a-GaAs/c-Si (p) heterojunctions
โ Scribed by K. Aguir; A. Fennouh; H. Carchano; J.L. Seguin; B. Elhadadi; F. Lalande
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 517 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0040-6090
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