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Properties of amorphous Bi2S3-crystalline silicon heterojunctions

โœ Scribed by B.K. Singh; T. Acharjee; A.N. Daw; R.N. Mitra


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
149 KB
Volume
35
Category
Article
ISSN
0038-1101

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Electrical characteristics of amorphous
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Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye