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The influence of target temperature and photon assistance on the radiation defect formation in low-fluence ion-implanted silicon

✍ Scribed by M.Yu. Barabanenkov; J. Gyulai; A.V. Leonov; V.N. Mordkovich; N.M. Omelyanovskaya; H. Ryssel

No coin nor oath required. For personal study only.

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