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Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

โœ Scribed by P.K. Giri


Book ID
108237341
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
203 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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โœ M.A. Gad; J.H. Evans-Freeman ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 166 KB

High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โ€ข 10 10 cm ร€2 . The low dose ens