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Interstitial type defects in ion implanted silicon

โœ Scribed by Berezhnov, N. I. ;Stelmakh, V. F. ;Chelyadinskii, A. R.


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
245 KB
Volume
78
Category
Article
ISSN
0031-8965

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In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron