๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Defects in oxygen implanted silicon

โœ Scribed by Supapan Seraphin


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
936 KB
Volume
32
Category
Article
ISSN
0927-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Precipitates and defects in silicon co-i
โœ B.S. Li; C.H. Zhang; H.H. Zhang; Y. Zhang; Y.T. Yang; L.Q. Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 931 KB

Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitate

Implantation-induced defects in silicon
โœ G Pensl; T Frank; M Krieger; M Laube; S Reshanov; F Schmid; M Weidner ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 377 KB